A Radiation Hardened by Design Cmos Asic for Thermopile Readouts

نویسنده

  • G. Quilligan
چکیده

Introduction: A radiation hardened by design (RHBD) mixed-signal application specific integrated circuit (ASIC) has been designed for a thermopile readout for operation in the harsh Jovian orbital environment. The multi-channel digitizer (MCD) ASIC (shown in Figure 1) includes 18 low noise amplifier channels which have tunable gain/filtering coefficients, a 16-bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The 18 channels, SDADC and controller were designed to operate with immunity to single event latchup (SE1.) and to at least 10 Mrad total ionizing dose (TID). The ASIC also contains a radiation tolerant 16-bit 20 MHz Nyquist ADC for general purpose instrumentation digitizer needs. The ASIC is currently undergoing fabrication in a commer~ cial 180 nm CMOS process. Although this ASIC was designed specifically for the harsh radiation environment of the NASA led lEO mission it is suitable for integration into instrumentation payloads 011 the ESA JUICE mission where the radiation hardness require~ ments are slightly less stringent.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

New Microlink Structures for CMOS-Compatible Thermopiles

A highly sensitive infrared (IR) detector requires a large absorption area and a low thermal conductance to maximize the temperature change and signal induced by the incident IR radiation. For the floating membrane of a microsensor, it is difficult to form a large area with suitable front-side etching windows at the same time. A new idea of improving complementary metal-oxide-semiconductor (CMO...

متن کامل

Radiation Hardened Structured ASIC Platform for Rapid Chip Development for Very High Speed System on a Chip (SoC) and Complex Digital Logic Systems

Submitted by drupal on Fri, 03/04/2016 16:48 Firm: Microelectronics Research Development Corporation [2] Award Solicitation: NASA SBIR Select 2014 Phase II Solicitation [3] Award ID: SBIR_14_P2_S_144053 Award Topic: Radiation Hardened Application Specific Integrated Circuit (ASIC) Platforms [4] Award Dollars: 1 499 950.00 Award Lead Center: Goddard Space Flight Center [5] Proposal Number: S20.0...

متن کامل

Test and Evaluation of HAL25: The ALICE SSD Front-End Chip

HAL25 is a mixed low noise, low power consumption and radiation hardened ASIC intended for the Silicon Strip Detectors (SSD) read out in the ALICE tracker. It is designed in a 0.25 micron CMOS process. It contains 128 analogue channels, consisting each of a preamplifier, a shaper and a storage capacitor. The analogue data is sampled by an external logic signal and then is serially read out thro...

متن کامل

Radiation-hardened MRAM-based LUT for non-volatile FPGA soft error mitigation with multi-node upset tolerance

In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utilizing spin Hall Effect (SHE)-magnetic random access memory (MRAM) devices. The design is motivated by modeling the effect of radiation particles striking hybrid CMOS/spin based circuits, and the resistive behavior of SHE-MRAM devices via established and precise physics equations. The models develop...

متن کامل

Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process

A stacked double-layer (SDL) thermopile-based infrared sensor, which comprised of 96 thermocouples on a suspended membrane, has been designed and fabricated with a CMOS-compatible process. The thermoelectric properties were characterized, and responsivity (Rs) of 202.8 V W−1 and detectivity (D∗) of 2.85∗108 cm Hz1/2 W−1 for a SDL thermopile were derived. (Some figures may appear in colour only ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012